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ChinaUNR411F00A
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TEILNUMMER DES HERSTELLERS
UNR411F00A
BESCHREIBUNG
TRANS PREBIAS PNP 50V NS-B1
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
HERSTELLER
Panasonic Electronic Components
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Panasonic Electronic Components
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
80 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
3-SIP
Supplier Device Package
NS-B1
Base Product Number
UNR411
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
UN411F-(TA)
UNR411F00ATB
UNR411F00ACT
UNR411F00ATB-NDR
UNR411F00ACT-NDR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Panasonic Electronic Components UNR411F00A
Dokumente und Medien
Datasheets
1(UNR411x Series)
Featured Product
1(Wearables Technology Components)
HTML Datasheet
1(UNR411x Series)
Product Drawings
()
Menge Preis
-
Stellvertreter
-