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China2N6661-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N6661-E3
BESCHREIBUNG
MOSFET N-CH 90V 860MA TO39
DETAILIERTE BESCHREIBUNG
N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
90 V
Current - Continuous Drain (Id) @ 25°C
860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
Base Product Number
2N6661
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix 2N6661-E3
Dokumente und Medien
Datasheets
1(2N6661(2)/2N6661JANTX(V))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Device OBS Update 15/May/2017)
PCN Assembly/Origin
1(SIL-062-2014-Rev-0 30/May/2014)
HTML Datasheet
1(2N6661(2)/2N6661JANTX(V))
Menge Preis
-
Stellvertreter
Teil Nr. : 2N6661
Hersteller. : Microchip Technology
Verfügbare Menge. : 1,008
Einzelpreis. : $15.90000
Ersatztyp. : Similar
Verfügbare Menge. : 1,008
Einzelpreis. : $15.90000
Ersatztyp. : Similar