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ChinaIGT60R190D1SATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IGT60R190D1SATMA1
BESCHREIBUNG
GANFET N-CH 600V 12.5A 8HSOF
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 960µA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
55.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
Base Product Number
IGT60R190
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IGT60R190D1SATMA1DKR
2156-IGT60R190D1SATMA1-448
SP001701702
IGT60R190D1SATMA1CT
IGT60R190D1SATMA1TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGT60R190D1SATMA1
Dokumente und Medien
Datasheets
1(GaN Selection Guide)
Other Related Documents
()
Product Brief
1(CoolGaN™ 600 V e-mode GaN HEMTs Brief)
Video File
()
Article Library
1(Why CoolGaN)
HTML Datasheet
()
Reliability Documents
1(Realiability and Qualification of CoolGaN)
Menge Preis
-
Stellvertreter
Teil Nr. : IGT60R190D1ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $2.63447
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $2.63447
Ersatztyp. : Similar