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ChinaTSM60NB380CH C5G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM60NB380CH C5G
BESCHREIBUNG
MOSFET N-CH 600V 9.5A TO251
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9.5A (Tc) 83W (Tc) Through Hole TO-251 (IPAK)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
TSM60NB380CH C5G Models
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 2.85A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
795 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
TSM60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TSM60NB380CHC5G
TSM60NB380CH C5G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM60NB380CH C5G
Dokumente und Medien
Datasheets
1(TSM60NB380CH C5G)
Environmental Information
()
PCN Obsolescence/ EOL
1(OBS 22/Jan/2024)
HTML Datasheet
1(TSM60NB380CH)
EDA Models
1(TSM60NB380CH C5G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IPSA70R360P7SAKMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 345
Einzelpreis. : $1.06000
Ersatztyp. : Similar
Verfügbare Menge. : 345
Einzelpreis. : $1.06000
Ersatztyp. : Similar