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ChinaIXTN120N25
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTN120N25
BESCHREIBUNG
MOSFET N-CH 250V 120A SOT227B
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 120A (Tc) 730W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
MegaMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
20mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
730W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXTN120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTN120N25
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
Menge Preis
-
Stellvertreter
-