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ChinaSS275TI12205
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TEILNUMMER DES HERSTELLERS
SS275TI12205
BESCHREIBUNG
DIODE ARR SIC SCHOT 1200V DE275
DETAILIERTE BESCHREIBUNG
Diode Array 3 Independent 1200 V 5A Surface Mount 6-SMD, Flat Lead Exposed Pad
HERSTELLER
IXYS-RF
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS-RF
Series
-
Package
Tube
Product Status
Obsolete
Diode Configuration
3 Independent
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
5A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Operating Temperature - Junction
-55°C ~ 175°C
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Lead Exposed Pad
Supplier Device Package
DE275
Base Product Number
SS275
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
California Prop 65
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Diode Arrays/IXYS-RF SS275TI12205
Dokumente und Medien
Datasheets
1(SS275Tx12205)
HTML Datasheet
1(SS275Tx12205)
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Stellvertreter
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