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ChinaFQP4N20L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP4N20L
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 3.8A (Tc) 45W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
548
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFQP4N20L
2156-FQP4N20L
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP4N20L
Dokumente und Medien
Datasheets
1(FQP4N20L Datasheet)
Menge Preis
QUANTITÄT: 548
Einzelpreis: $0.55
Verpackung: Bulk
MinMultiplikator: 548
Verpackung: Bulk
MinMultiplikator: 548
Stellvertreter
-