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ChinaSPP18P06PHKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPP18P06PHKSA1
BESCHREIBUNG
MOSFET P-CH 60V 18.7A TO220-3
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 18.7A (Ta) 81.1W (Ta) Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
81.1W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
SPP18P
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SPP18P06PIN-NDR
SP000012300
SPP18P06PXK
SPP18P06PXTIN-ND
SPP18P06PIN-ND
SPP18P06PXTIN
SPP18P06PX
SPP18P06P
SPP18P06PIN
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP18P06PHKSA1
Dokumente und Medien
Datasheets
1(SPP18P06P)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPP18P06P)
Menge Preis
-
Stellvertreter
Teil Nr. : SPP18P06PHXKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 726
Einzelpreis. : $1.51000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 726
Einzelpreis. : $1.51000
Ersatztyp. : Parametric Equivalent