Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V
Rds On (Max) @ Id, Vgs
149mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
331 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
UFM
Package / Case
3-SMD, Flat Leads
Base Product Number
SSM3J114