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ChinaSI3529DV-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3529DV-T1-GE3
BESCHREIBUNG
MOSFET N/P-CH 40V 2.5A 6TSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 40V 2.5A, 1.95A 1.4W Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
2.5A, 1.95A
Rds On (Max) @ Id, Vgs
125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
205pF @ 20V
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3529
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI3529DV-T1-GE3
Dokumente und Medien
Datasheets
1(SI3529DV)
Menge Preis
-
Stellvertreter
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