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ChinaFDA2712
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TEILNUMMER DES HERSTELLERS
FDA2712
BESCHREIBUNG
MOSFET N-CH 250V 64A TO3PN
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 64A (Tc) 357W (Tc) Through Hole TO-3PN
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
34mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
129 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10175 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
357W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDA2712
2156-FDA2712-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDA2712
Dokumente und Medien
Datasheets
1(FDA2712)
Menge Preis
QUANTITÄT: 30
Einzelpreis: $10.34
Verpackung: Tube
MinMultiplikator: 30
Verpackung: Tube
MinMultiplikator: 30
Stellvertreter
-