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ChinaSI8469DB-T2-E1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI8469DB-T2-E1
BESCHREIBUNG
MOSFET P-CH 8V 4.6A 4MICROFOOT
DETAILIERTE BESCHREIBUNG
P-Channel 8 V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
780mW (Ta), 1.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-UFBGA
Base Product Number
SI8469
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI8469DB-T2-E1-ND
SI8469DB-T2-E1CT
SI8469DB-T2-E1TR
SI8469DB-T2-E1DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI8469DB-T2-E1
Dokumente und Medien
Datasheets
1(SI8469DB-T2-E1)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI8469DB-T2-E1)
Menge Preis
-
Stellvertreter
-