Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSC130P03LSGAUMA1
BESCHREIBUNG
MOSFET P-CH 30V 12A/22.5A TDSON
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 12A (Ta), 22.5A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
73.1 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3670 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-3
Package / Case
8-PowerVDFN

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

BSC130P03LSG
BSC130P03LS GINCT-ND
BSC130P03LS GINTR-ND
INFBSC130P03LSGAUMA1
BSC130P03LS GINTR
SP000359666
BSC130P03LS GINDKR
2156-BSC130P03LSGAUMA1
BSC130P03LS G
BSC130P03LS GINDKR-ND
BSC130P03LSGAUMA1CT
BSC130P03LSGAUMA1DKR
BSC130P03LS GINCT
BSC130P03LS G-ND
BSC130P03LSGAUMA1TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC130P03LSGAUMA1

Dokumente und Medien

Datasheets
1(BSC130P03LS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSC130P03LS G)
Simulation Models
1(MOSFET OptiMOS™ 30V P-Channel Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFR5505TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 155,289
Einzelpreis. : $1.09000
Ersatztyp. : Similar