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ChinaAPT58M50JCU3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT58M50JCU3
BESCHREIBUNG
MOSFET N-CH 500V 58A SOT227
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 58A (Tc) 543W (Tc) Chassis Mount SOT-227
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
POWER MOS 8™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
340 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
10800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
543W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
150-APT58M50JCU3
APT58M50JCU3-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT58M50JCU3
Dokumente und Medien
Environmental Information
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Menge Preis
-
Stellvertreter
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