English
Spain
Rusia
Italy
ChinaRN1961FE(TE85L,F)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN1961FE(TE85L,F)
BESCHREIBUNG
TRANS 2NPN PREBIAS 0.1W ES6
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1961
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RN1961FE(TE85LF)DKR
RN1961FE(TE85LF)TR
RN1961FE(TE85LF)CT
RN1961FETE85LF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1961FE(TE85L,F)
Dokumente und Medien
Datasheets
1(RN1961-66FE)
Menge Preis
-
Stellvertreter
-