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ChinaIXFB150N65X2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFB150N65X2
BESCHREIBUNG
MOSFET N-CH 650V 150A PLUS264
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 150A (Tc) 1560W (Tc) Through Hole PLUS264™
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
IXFB150N65X2 Models
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
430 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
20400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1560W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS264™
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXFB150
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
IXFB150N65X2X
IXFB150N65X2X-ND
IXFB150N65X2XINACTIVE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFB150N65X2
Dokumente und Medien
Datasheets
()
Environmental Information
1(Ixys IC REACH)
Featured Product
()
HTML Datasheet
1(IXFB150N65X2)
EDA Models
1(IXFB150N65X2 Models)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $26.6172
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 25
Einzelpreis: $28.3916
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $34.25
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-