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TEILNUMMER DES HERSTELLERS
BCW60BE6327
BESCHREIBUNG
TRANS NPN 32V 0.1A SOT23
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 32 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
7,397
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
32 V
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max)
20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA, 5V
Power - Max
330 mW
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
IFEINFBCW60BE6327
2156-BCW60BE6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BCW60BE6327
Dokumente und Medien
Datasheets
1(BCX70GE6327HTSA1)
Menge Preis
-
Stellvertreter
-