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TEILNUMMER DES HERSTELLERS
IPI80N06S3-07
BESCHREIBUNG
MOSFET N-CH 55V 80A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 80A (Tc) 135W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 51A, 10V
Vgs(th) (Max) @ Id
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
170 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7768 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI80N06S3-07-ND
IPI80N06S3-07IN
IPI80N06S307X
2156-IPI80N06S3-07-IT
SP000088064
IPI80N06S307XK
IFEINFIPI80N06S3-07
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N06S3-07
Dokumente und Medien
Datasheets
1(IPB(I,P)80N06S3-07)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPB(I,P)80N06S3-07)
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