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ChinaBUK7E3R5-60E,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK7E3R5-60E,127
BESCHREIBUNG
TRANSISTOR >30MHZ
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 293W (Tc) Through Hole I2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
316
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8920 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
293W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NEXNXPBUK7E3R5-60E,127
2156-BUK7E3R5-60E,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK7E3R5-60E,127
Dokumente und Medien
Datasheets
1(BUK7E3R5-60E)
HTML Datasheet
1(BUK7E3R5-60E)
Menge Preis
QUANTITÄT: 316
Einzelpreis: $0.95
Verpackung: Bulk
MinMultiplikator: 316
Verpackung: Bulk
MinMultiplikator: 316
Stellvertreter
-