English
Spain
Rusia
Italy
ChinaRJK60S3DPP-E0#T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK60S3DPP-E0#T2
BESCHREIBUNG
MOSFET N-CH 600V 12A TO220FP
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 12A (Ta) 27.7W (Tc) Through Hole TO-220FP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
82
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
440mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
27.7W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSRJK60S3DPP-E0#T2
2156-RJK60S3DPP-E0#T2-RE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK60S3DPP-E0#T2
Dokumente und Medien
Datasheets
1(RJK60S3DPP-E0#T2)
Menge Preis
QUANTITÄT: 82
Einzelpreis: $3.7
Verpackung: Tube
MinMultiplikator: 82
Verpackung: Tube
MinMultiplikator: 82
Stellvertreter
-