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ChinaSIHB8N50D-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHB8N50D-GE3
BESCHREIBUNG
MOSFET N-CH 500V 8.7A TO263
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 8.7A (Tc) 156W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
10 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
527 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB8
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHB8N50D-GE3
Dokumente und Medien
Datasheets
1(SIHB8N50D)
PCN Assembly/Origin
1(Additional Assembly Site 21/Oct/2016)
HTML Datasheet
1(SIHB8N50D)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $0.72114
Verpackung: Tube
MinMultiplikator: 1000
Verpackung: Tube
MinMultiplikator: 1000
Stellvertreter
-