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ChinaFDFMA2P859T
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDFMA2P859T
BESCHREIBUNG
MOSFET P-CH 20V 3A MICROFET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MicroFET 2x2 Thin
Package / Case
6-UDFN Exposed Pad
Base Product Number
FDFMA2
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FDFMA2P859TDKR
FDFMA2P859TCT
FDFMA2P859TTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDFMA2P859T
Dokumente und Medien
Datasheets
1(FDFMA2P859T)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FDFMA2P859T)
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