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ChinaSSU1N60BTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SSU1N60BTU
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,219
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
215 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCSSU1N60BTU
2156-SSU1N60BTU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor SSU1N60BTU
Dokumente und Medien
Datasheets
1(SSR1N60BTM)
Menge Preis
QUANTITÄT: 2219
Einzelpreis: $0.14
Verpackung: Bulk
MinMultiplikator: 2219
Verpackung: Bulk
MinMultiplikator: 2219
Stellvertreter
-