Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7.5A, 8A
Rds On (Max) @ Id, Vgs
24mOhm @ 3.75A, 10V
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
630pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Base Product Number
HAT2218