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ChinaNDD05N50Z-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NDD05N50Z-1G
BESCHREIBUNG
MOSFET N-CH 500V 4.7A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 4.7A (Tc) 83W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
18.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Base Product Number
NDD05
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNDD05N50Z-1G
2156-NDD05N50Z-1G-ON
NDD05N50Z1G
NDD05N50Z-1GOS
NDD05N50Z-1G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD05N50Z-1G
Dokumente und Medien
Datasheets
1(NDF,NDD05N50Z)
Environmental Information
()
PCN Obsolescence/ EOL
1(3Q2105 EOL 6/Nov/2015)
HTML Datasheet
1(NDF,NDD05N50Z)
Menge Preis
-
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