Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
110mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
330mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
VS-8 (2.9x1.5)
Package / Case
8-SMD, Flat Lead
Base Product Number
TPCF8B01