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ChinaIRF6618TR1
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TEILNUMMER DES HERSTELLERS
IRF6618TR1
BESCHREIBUNG
MOSFET N-CH 30V 30A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 30A (Ta), 170A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5640 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6618TR1
Dokumente und Medien
Datasheets
1(IRF6618/TR1)
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HTML Datasheet
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Menge Preis
-
Stellvertreter
Teil Nr. : IRF6618TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,553
Einzelpreis. : $2.57000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 4,553
Einzelpreis. : $2.57000
Ersatztyp. : Parametric Equivalent