Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FDB6021P
BESCHREIBUNG
MOSFET P-CH 20V 28A TO263AB
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 28A (Ta) 37W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
355

Technische Daten

Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1890 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FAIFSCFDB6021P
2156-FDB6021P-FSTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDB6021P

Dokumente und Medien

Datasheets
1(FDB6021P)

Menge Preis

QUANTITÄT: 355
Einzelpreis: $0.85
Verpackung: Bulk
MinMultiplikator: 355

Stellvertreter

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