Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
R6530ENZC8
BESCHREIBUNG
MOSFET N-CH 650V 30A TO3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 30A (Tc) 86W (Tc) Through Hole TO-3PF
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
140mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 960µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
R6530

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6530ENZC8

Dokumente und Medien

Datasheets
1(R6530ENZ)
PCN Obsolescence/ EOL
1(Mult Dev EOL 26/Jan/2020)

Menge Preis

-

Stellvertreter

Teil Nr. : R6530ENZC17
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 300
Einzelpreis. : $6.25000
Ersatztyp. : Similar