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China2N6796
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TEILNUMMER DES HERSTELLERS
2N6796
BESCHREIBUNG
MOSFET N-CH 100V 8A TO39
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs
6.34 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2N6796-ND
150-2N6796
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation 2N6796
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
()
Menge Preis
-
Stellvertreter
-