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TEILNUMMER DES HERSTELLERS
1N8031-GA
BESCHREIBUNG
DIODE SIL CARBIDE 650V 1A TO276
DETAILIERTE BESCHREIBUNG
Diode 650 V 1A Through Hole TO-276
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 1 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Capacitance @ Vr, F
76pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-276AA
Supplier Device Package
TO-276
Operating Temperature - Junction
-55°C ~ 250°C
Base Product Number
1N8031
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
1N8031GA
1242-1118
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor 1N8031-GA
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1(1N8031-GA)
Featured Product
1(Silicon Carbide Schottky Diode)
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