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ChinaDTD123TSTP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DTD123TSTP
BESCHREIBUNG
TRANS PREBIAS NPN 40V 0.5A SPT
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 500 mA 200 MHz 300 mW Through Hole SPT
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Resistor - Base (R1)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA (ICBO)
Frequency - Transition
200 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
SC-72 Formed Leads
Supplier Device Package
SPT
Base Product Number
DTD123
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Rohm Semiconductor DTD123TSTP
Dokumente und Medien
Datasheets
1(DTD123TK,TS)
HTML Datasheet
1(DTD123TK,TS)
Menge Preis
-
Stellvertreter
-