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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLZ34NLPBF
BESCHREIBUNG
MOSFET N-CH 55V 30A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 68W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRLZ34NLPBF
SP001552974
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLZ34NLPBF
Dokumente und Medien
Datasheets
1(IRLZ34NS/L)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
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1(Data Processing Systems)
HTML Datasheet
1(IRLZ34NS/L)
Menge Preis
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Stellvertreter
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