Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
PDTB113ES,126
BESCHREIBUNG
TRANS PREBIAS PNP 50V TO92-3
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 500 mW Through Hole TO-92-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000

Technische Daten

Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Power - Max
500 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PDTB113

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

PDTB113ES AMO
PDTB113ES AMO-ND
934059144126

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTB113ES,126

Dokumente und Medien

Datasheets
1(PDTB113E)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PDTB113E)

Menge Preis

-

Stellvertreter

Teil Nr. : DTB113ECT116
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 2,496
Einzelpreis. : $0.36000
Ersatztyp. : Similar
Teil Nr. : DTB113EKT146
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 1,686
Einzelpreis. : $0.39000
Ersatztyp. : Similar