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ChinaHFA3127MJ/883
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HFA3127MJ/883
BESCHREIBUNG
DUAL MARKED (5962-9474901MEA)
DETAILIERTE BESCHREIBUNG
RF Transistor 5 NPN 12V 65mA 8GHz 150mW Through Hole 16-CERDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
12
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
5 NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
3.5dB @ 1GHz
Gain
-
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 2V
Current - Collector (Ic) (Max)
65mA
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Through Hole
Package / Case
16-CDIP (0.300", 7.62mm)
Supplier Device Package
16-CERDIP
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-HFA3127MJ/883
HARHARHFA3127MJ/883
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Harris Corporation HFA3127MJ/883
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 12
Einzelpreis: $26.72
Verpackung: Bulk
MinMultiplikator: 12
Verpackung: Bulk
MinMultiplikator: 12
Stellvertreter
-