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ChinaIRF123
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF123
BESCHREIBUNG
N-CHANNEL HERMETIC MOS HEXFET
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 7A (Tc) 40W (Tc) Through Hole TO-3
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
442
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AA, TO-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRF123
IRFIRFIRF123
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF123
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 442
Einzelpreis: $0.68
Verpackung: Bulk
MinMultiplikator: 442
Verpackung: Bulk
MinMultiplikator: 442
Stellvertreter
-