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TEILNUMMER DES HERSTELLERS
2SC2610TZ-E
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSTR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 300 V 100 mA 80MHz 800 mW Through Hole TO-92MOD
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,249
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2mA, 20mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 20V
Power - Max
800 mW
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-2SC2610TZ-E
RENRNS2SC2610TZ-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2610TZ-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1249
Einzelpreis: $0.24
Verpackung: Bulk
MinMultiplikator: 1249
Verpackung: Bulk
MinMultiplikator: 1249
Stellvertreter
-