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ChinaMCB60I1200TZ-TUB
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MCB60I1200TZ-TUB
BESCHREIBUNG
SICFET N-CH 1.2KV 90A TO268AA
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 90A (Tc) Surface Mount TO-268AA (D3Pak-HV)
HERSTELLER
IXYS
STANDARD LEADTIME
86 Weeks
EDACAD-MODELL
MCB60I1200TZ-TUB Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2790 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268AA (D3Pak-HV)
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Base Product Number
MCB60I1200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS MCB60I1200TZ-TUB
Dokumente und Medien
Datasheets
1(MCB60I1200TZ)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
EDA Models
1(MCB60I1200TZ-TUB Models)
Menge Preis
QUANTITÄT: 30
Einzelpreis: $100.83633
Verpackung: Tube
MinMultiplikator: 30
Verpackung: Tube
MinMultiplikator: 30
Stellvertreter
-