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ChinaHGTG30N60C3D
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HGTG30N60C3D
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT 600 V 63 A 208 W Through Hole TO-247
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
44
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
63 A
Current - Collector Pulsed (Icm)
252 A
Vce(on) (Max) @ Vge, Ic
1.8V @ 15V, 30A
Power - Max
208 W
Switching Energy
1.05mJ (on), 2.5mJ (off)
Input Type
Standard
Gate Charge
162 nC
Td (on/off) @ 25°C
-
Test Condition
-
Reverse Recovery Time (trr)
60 ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-HGTG30N60C3D
FAIFSCHGTG30N60C3D
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor HGTG30N60C3D
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 44
Einzelpreis: $6.96
Verpackung: Bulk
MinMultiplikator: 44
Verpackung: Bulk
MinMultiplikator: 44
Stellvertreter
-