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ChinaSTP6N65M2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STP6N65M2
BESCHREIBUNG
MOSFET N-CH 650V 4A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STP6N65M2 Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP6N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-15040-5
-497-15040-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP6N65M2
Dokumente und Medien
Datasheets
1(ST(F,P,U)6N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
HTML Datasheet
1(ST(F,P,U)6N65M2)
EDA Models
1(STP6N65M2 Models)
Menge Preis
-
Stellvertreter
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Verfügbare Menge. : 508
Einzelpreis. : $1.36000
Ersatztyp. : Similar
Verfügbare Menge. : 508
Einzelpreis. : $1.36000
Ersatztyp. : Similar