English
Spain
Rusia
Italy
ChinaRFD8P06LE
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFD8P06LE
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 8A (Tc) 48W (Tc) Through Hole I-PAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
919
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 5V
Rds On (Max) @ Id, Vgs
300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
675 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFD8P06LE
2156-RFD8P06LE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor RFD8P06LE
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 919
Einzelpreis: $0.33
Verpackung: Bulk
MinMultiplikator: 919
Verpackung: Bulk
MinMultiplikator: 919
Stellvertreter
-