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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPI051N15N5AKSA1
BESCHREIBUNG
MV POWER MOS
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 5
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7800 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI051
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001326440
2156-IPI051N15N5AKSA1
INFINFIPI051N15N5AKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI051N15N5AKSA1
Dokumente und Medien
Datasheets
1(IPI051N15N5)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(IPI051N15N5)
Simulation Models
1(MOSFET OptiMOS™ 150V N-Channel Spice Model)
Menge Preis
QUANTITÄT: 500
Einzelpreis: $4.84996
Verpackung: Tube
MinMultiplikator: 500
Verpackung: Tube
MinMultiplikator: 500
Stellvertreter
-