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ChinaPMGD175XN,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMGD175XN,115
BESCHREIBUNG
MOSFET 2N-CH 30V 0.9A 6TSSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 900mA 390mW Surface Mount 6-TSSOP
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
900mA
Rds On (Max) @ Id, Vgs
225mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
75pF @ 15V
Power - Max
390mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
6-TSSOP
Base Product Number
PMGD1
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NEXNXPPMGD175XN,115
PMGD175XN,115-ND
2156-PMGD175XN,115-ND
2156-PMGD175XN115
2156-PMGD175XN115-NXTR-ND
568-10793-6
568-10793-2
934066754115
568-10793-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/NXP USA Inc. PMGD175XN,115
Dokumente und Medien
Datasheets
1(PMGD175XN)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMGD175XN)
Menge Preis
-
Stellvertreter
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