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ChinaFDFME2P823ZT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDFME2P823ZT
BESCHREIBUNG
2.6A, 20V, P-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,025
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-MicroFET (1.6x1.6)
Package / Case
6-UFDFN Exposed Pad
Base Product Number
FDFME2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
FAIFSCFDFME2P823ZT
2156-FDFME2P823ZT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDFME2P823ZT
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1025
Einzelpreis: $0.29
Verpackung: Bulk
MinMultiplikator: 1025
Verpackung: Bulk
MinMultiplikator: 1025
Stellvertreter
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