English
Spain
Rusia
Italy
ChinaSI1307EDL-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI1307EDL-T1-GE3
BESCHREIBUNG
MOSFET P-CH 12V 850MA SC70-3
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 850mA (Ta) 290mW (Ta) Surface Mount SC-70-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
290mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-3
Package / Case
SC-70, SOT-323
Base Product Number
SI1307
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
SI1307EDL-T1-GE3CT
SI1307EDL-T1-GE3DKR
SI1307EDLT1GE3
SI1307EDL-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1307EDL-T1-GE3
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI1307EDL)
Menge Preis
-
Stellvertreter
-