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ChinaIPC302N12N3X1SA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPC302N12N3X1SA1
BESCHREIBUNG
MOSFET N-CH 120V 1A SAWN ON FOIL
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 1A (Tj) Surface Mount Sawn on foil
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 275µA
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
Sawn on foil
Package / Case
Die
Base Product Number
IPC302N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPC302N12N3X1SA1-ND
SP000717450
448-IPC302N12N3X1SA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPC302N12N3X1SA1
Dokumente und Medien
Datasheets
1(IPC302N12N3)
HTML Datasheet
1(IPC302N12N3)
Menge Preis
QUANTITÄT: 4425
Einzelpreis: $3.5189
Verpackung: Bulk
MinMultiplikator: 4425
Verpackung: Bulk
MinMultiplikator: 4425
Stellvertreter
-