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ChinaFQP18N50V2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQP18N50V2
BESCHREIBUNG
MOSFET N-CH 500V 18A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 18A (Tc) 208W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
69
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQP18N50V2-FS
FAIFSCFQP18N50V2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP18N50V2
Dokumente und Medien
Datasheets
1(FQP18N50V2)
Menge Preis
QUANTITÄT: 69
Einzelpreis: $4.37
Verpackung: Tube
MinMultiplikator: 69
Verpackung: Tube
MinMultiplikator: 69
Stellvertreter
-