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ChinaBFR193FH6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BFR193FH6327
BESCHREIBUNG
HIGH LINEARITY TRANSISTOR
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-TSFP-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,575
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
19dB
Power - Max
580mW
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
PG-TSFP-3-1
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BFR193FH6327
INFINFBFR193FH6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFR193FH6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
-
Stellvertreter
-