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ChinaNESG340033-T1B-A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NESG340033-T1B-A
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 5.5V 400mA 10GHz 480mW Surface Mount 3-MINIMOLD
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
902
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5.5V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
0.7dB @ 1GHz
Gain
12dB
Power - Max
480mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 15mA, 3.3V
Current - Collector (Ic) (Max)
400mA
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MINIMOLD
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-NESG340033-T1B-A
RENRNSNESG340033-T1B-A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation NESG340033-T1B-A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 902
Einzelpreis: $0.33
Verpackung: Bulk
MinMultiplikator: 902
Verpackung: Bulk
MinMultiplikator: 902
Stellvertreter
-