English
Spain
Rusia
Italy
ChinaIRLMS1902TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLMS1902TR
BESCHREIBUNG
MOSFET N-CH 20V 3.2A MICRO6
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRLMS1902CT
IRLMS1902
*IRLMS1902TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLMS1902TR
Dokumente und Medien
Datasheets
1(IRLMS1902)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRLMS1902TR Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLMS1902)
Menge Preis
-
Stellvertreter
Teil Nr. : ZXMN2A01E6TA
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 7,343
Einzelpreis. : $0.58000
Ersatztyp. : Similar
Verfügbare Menge. : 7,343
Einzelpreis. : $0.58000
Ersatztyp. : Similar